[Retracted] Realization of a Noncontact IC Chip with Embedded Ferroelectric Memory in an Auxiliary Timing Device for Sports Games

Table 1

Three kinds of memory performance parameters.

Parameter	FLASH	EEPROM	Ferroelectric memory
Unit structure	1A	2A	2A2R
Write time	12	2	150
Read time (ns)	125	205	115
Write voltage (V)	21	12	4/2.7
Number of reads and writes	2A10	2A10	4A20
Quiescent current (μA)	17	3	25
Maximum write operation current (mA)	37	10	6
Maximum read operation current (mA)	16	9	8