Journal of Nanomaterials

Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications


Publishing date
25 Sep 2015
Status
Published
Submission deadline
08 May 2015

Lead Editor

1National Institute for Materials Science, Tsukuba, Japan

2University of Oxford, Oxford, UK

3Laboratoire de Genie Electrique de Paris (LGEP), Paris, France

4National Yang Ming University, Taipei, Taiwan

5National Institute of Advanced Industrial Science and Technology (AIST), Tokyo, Japan


Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications

Description

Nanostructured wide-bandgap (Eg > 2 eV) semiconductors (NWS), such as III-nitrides, SiC, ZnO, TiO2, diamond, BN, and others, have attracted intensive research attention owing to prospective applications in solid-state lighting, solar cells, power electronics, sensors, biological detection, spintronics, and MEMS/NEMS. These nanostructured semiconductors exhibit tremendous advantages in terms of power capability, energy conversion efficiency, optical properties, radiation strength, high temperature, and frequency operation. Although great progress has been achieved in the synthesis of the NWS materials and promising device applications have been demonstrated since the 21st century, much further research in the crystallinity improvement, electronic structure control, impurities doping, and devices design needs to be carried out. The growth dynamics and the defect physics of NWS should be better understood to push forward their potential applications.

The major aims of this special issue are to seek for the recent research in the novel growth strategies of NWS materials and their hybrid structures, the electronic structure tailoring for functionalization, novel devices concepts, devices physics, and applications in various fields. The authors are cordially invited to submit original research papers and review articles reflecting the current progress in nanostructured wide-bandgap semiconductors.

Potential topics include, but are not limited to:

  • Growth and fundamentals in the nanostructured wide-bandgap semiconductors or the hybrids such as III-nitrides, SiC, ZnO, TiO2, diamond, BN, and others
  • Characterizations and properties (electronic, optical, thermal, mechanical and tribological, magnetic, and electrochemical)
  • Dopants, defects, surface, and interface
  • Power electronics based on SiC, III-nitrides, and diamond
  • Optoelectronic applications: solar cells (perovskite, multijunction, intermediate band, dye-sensitized, etc.), light emitting diodes, laser diode, photodetectors, and photocatalysis
  • Sensing devices: physical, chemical, and biological analyses
  • MEMS/NEMS
  • Nanotoxicity

Articles

  • Special Issue
  • - Volume 2015
  • - Article ID 713896
  • - Editorial

Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications

Meiyong Liao | Thomas Stergiopoulos | ... | Guihua Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 582186
  • - Research Article

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Deming Ma | Xi Chen | ... | Enling Li
  • Special Issue
  • - Volume 2015
  • - Article ID 248191
  • - Research Article

A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

W. Wang | Y. Cai | ... | H. X. Wang
  • Special Issue
  • - Volume 2015
  • - Article ID 124640
  • - Research Article

Diamond Based Field-Effect Transistors of Zr Gate with Dielectric Layers

W. Wang | C. Hu | ... | H. X. Wang
  • Special Issue
  • - Volume 2015
  • - Article ID 854074
  • - Research Article

Fabrication and Characterization of Highly Oriented N-Doped ZnO Nanorods by Selective Area Epitaxy

Yang Zhang | Shulin Gu | ... | Youdou Zheng
  • Special Issue
  • - Volume 2015
  • - Article ID 903098
  • - Research Article

Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure

Qun Li | Jingwen Zhang | ... | Xun Hou
  • Special Issue
  • - Volume 2015
  • - Article ID 694234
  • - Research Article

Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

Li Meng | Jingwen Zhang | ... | Xun Hou
  • Special Issue
  • - Volume 2015
  • - Article ID 478375
  • - Research Article

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Shyr-Long Jeng | Chih-Chiang Wu | Wei-Hua Chieng
  • Special Issue
  • - Volume 2015
  • - Article ID 940857
  • - Research Article

Mechanism and Kinetics Study for Photocatalytic Oxidation Degradation: A Case Study for Phenoxyacetic Acid Organic Pollutant

Kian Mun Lee | Sharifah Bee Abd Hamid | Chin Wei Lai
  • Special Issue
  • - Volume 2015
  • - Article ID 692562
  • - Review Article

A Review on the Low-Dimensional and Hybridized Nanostructured Diamond Films

Hongdong Li | Shaoheng Cheng | ... | Jie Song
Journal of Nanomaterials
 Journal metrics
Acceptance rate49%
Submission to final decision69 days
Acceptance to publication29 days
CiteScore3.200
Impact Factor1.980
 Submit

We are committed to sharing findings related to COVID-19 as quickly as possible. We will be providing unlimited waivers of publication charges for accepted research articles as well as case reports and case series related to COVID-19. Review articles are excluded from this waiver policy. Sign up here as a reviewer to help fast-track new submissions.