Journal of Nanotechnology / 2011 / Article / Tab 1

Research Article

Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

Table 1

Deposition parameters employed for synthesis of Si:H films by hot wire method.

Filament temperature ( )1900°C
Process pressure ( )30–300 mTorr
Substrate temperature ( ) °C
SiH4 flow rate ( )5 sccm
Filament to substrate distance ( )6 cm
Deposition time ( )10 Minutes

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