Journal of Nanotechnology / 2012 / Article / Fig 15

Review Article

Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Figure 15

4.2-K PL spectra for heterostructure NWs with GaAs QW buried in GaAsP. (a) PL spectra for NWs with GaAs QW for growth times ( 𝑡 Q W ) of 1.5, 3.0, and 4.5 sec. NW pitch is 3 μm. PL spectrum for GaAsP/GaAs heterostructure NW without QW has been plotted as reference. (b) PL spectra for NWs with GaAs QW for NW pitches of 0.5, 1.0, and 3.0 μm. 𝑡 Q W is 1.5 sec.
169284.fig.0015a
(a)
169284.fig.0015b
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