Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

<table>4.2-K PL spectra for heterostructure NWs with GaAs QW buried in GaAsP. (a) PL spectra for NWs with GaAs QW for growth times (<svg height="14.825" id="M96" style="vertical-align:-4.68872pt" version="1.1" viewbox="0 0 23.862499 14.825" width="23.862499" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.825)">
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<text transform="matrix(1,0,0,-1,-71.95,64.86)">
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</svg>) of 1.5, 3.0, and 4.5 sec. NW pitch is 3 <i>μ</i>m. PL spectrum for GaAsP/GaAs heterostructure NW without QW has been plotted as reference. (b) PL spectra for NWs with GaAs QW for NW pitches of 0.5, 1.0, and 3.0 <i>μ</i>m. <svg height="14.825" id="M97" style="vertical-align:-4.68872pt" version="1.1" viewbox="0 0 23.862499 14.825" width="23.862499" xmlns="http://www.w3.org/2000/svg">
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<text transform="matrix(1,0,0,-1,-71.95,64.86)">
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</svg> is 1.5 sec.</table>

Journal of Nanotechnology

fig15

Figure 15

Figure 15: Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy 