Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

<table>PL spectra of core-shell nanowires (NWs), bare GaAs nanowires, and reference semi-insulating GaAs substrate. Intensity of core-shell nanowires is about 20 times larger than that of bare GaAs nanowires [<a href="/journals/jnt/2012/169284/#B29">29</a>].</table>

Journal of Nanotechnology

fig19

Figure 19

Figure 19: Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy 