Journal of Nanotechnology / 2012 / Article / Fig 27

Review Article

Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Figure 27

Normalized temperature-dependent spectral features recorded from single GaAs/GaAsP nanowire for lasing. (a) PL spectra for lasing recorded at 4.2, 25, 50, 75, 100, and 125 K. (b) Plots of temperature-dependent lasing wavelengths (marks with filled squares). Dependence of temperature on GaAs bandgap is also given in curve for comparison [32].

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