Journal of Nanotechnology / 2012 / Article / Fig 4

Review Article

Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Figure 4

(a) Micro-PL spectra for sample I at room temperature (RT) and (b) at 77 K [28]. Open circles indicate the emission peaks of InGaAs.
169284.fig.004a
(a)
169284.fig.004b
(b)

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