Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
(a) SS versus for TFETs. p-TFET exhibits sub-60 mV/decade swing for 3 decades of , while n-TFET maintained sub-60 mV/decade for more than 2 decades of ( V). (b) SS variations on nanowire diameter of p-TFETs. SS increases as NW diameter gets wider.
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