Journal of Nanotechnology / 2012 / Article / Fig 10

Review Article

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 10

(a) SS versus 𝐼 d for TFETs. p-TFET exhibits sub-60 mV/decade swing for 3 decades of 𝐼 d , while n-TFET maintained sub-60 mV/decade for more than 2 decades of 𝐼 d ( 𝑉 d s = 0 . 1  V). (b) SS variations on nanowire diameter of p-TFETs. SS increases as NW diameter gets wider.
492121.fig.0010a
(a)
492121.fig.0010b
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