Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
Figure 23
Schematic of fabrication (a) SiNW formation by dry etch, (b) Ion implantation, P/N elements definition, each element consists of hundreds of SiNW, (c) P/N couples formed by dry etch, (d) SiNW top and bottom silicidation while protecting the sidewall, (e) dielectric deposition and etch back to expose only the tip of the SiNW, and Top metallization. (f) SEM images of pillar formation, (g) N & P implants can be seen clearly under microscope with a different shade, (h) SEM image of SiNW after N/P implant, and (i) metallization etch showing individual N/P couples. Inset shows the tips of the SiNW exposing after oxide etch which confirms structure of the TEG. (h) and (i) are images of test structures, the actual design is too large to be shown in SEM image. (Reprinted with permission from [70]. [2011] IEEE.)
