Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
SEM pictures at different stages of device fabrication. (a) Vertical nanowire with diameter ~20 nm; (b) after gate patterning by lithography but before exposing the drain (the tip of the pillar) of the transistor; (c) after the drain (pillar tip) is exposed, ready for taking metal contacts, (d) vertical nanowire arrays with pitch of 500 nm. Nanowires are 1 μm tall with a diameter of ~20 nm. (Reprinted with permission from .  IEEE.)
Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.