Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach
Figure 15
Rectification ratio of a junction made of tungsten and subject to an external bias , with , 0.1 and 0.01 V (downwards as indicated). The solid, dashed and dot-dashed lines indicate results achieved respectively with , , and as models for the dielectric function of the tip [19].