Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

Figure 16

Rectification ratio of a junction made of silver and subject to an external bias 𝑉_ext(𝑡)=𝑉_extcos(Ω𝑡), with 𝑉_ext=1, 0.1 and 0.01 V (downwards, as indicated). The solid, dashed and dot-dashed lines indicate results indicate results achieved respectively with 𝜀(Ω)=−∞, 𝜀(Ω)=1−Ω^2𝑝/Ω², and 𝜀(Ω)=1−Ω^2𝑝/(Ω²+𝑖Ω/𝜏) as models for the dielectric function of the tip. Results obtained at the 3.1 eV resonance energy with 𝜀(Ω)=1−Ω^2𝑝/Ω² as model for the dielectric function of the tip are not represented [19].