A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

Figure 2

(a) As concentration profile in the nanoscale multilayer implanted with As fluence of 5×10¹⁵ As/cm² before (full line) and after (line with circles) the 950°C 80 min annealing process; the dashed lines represent the Si/SiO₂ interfaces. (b) As concentration profiles for the nanoscale multilayers implanted with As fluence of 2.5×10¹⁵, 5×10¹⁵, and 1×10¹⁶ As/cm² after the 950°C 80 min annealing process; the dashed lines represent the Si/SiO₂ interfaces. (c) “effective segregation coefficient” C_max/C_min, calculated as the ration of maximum As concentration at the Si/SiO₂ interfaces and the minimum As concentration at the center of the Si layer, versus the As fluence. (d) Estimated values of the amount of As surface concentration trapped at each Si/SiO₂ interface as a function of the As-implanted fluence.