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Journal of Nanotechnology
Volume 2012 (2012), Article ID 890607, 8 pages
Research Article

Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Received 14 April 2011; Accepted 13 May 2011

Academic Editor: Qihua Xiong

Copyright © 2012 Kouta Tateno et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The VLS (vapor-liquid-solid) method is one of the promising techniques for growing vertical III-V compound semiconductor nanowires on Si for application to optoelectronic circuits. Heterostructures grown in the axial direction by the VLS method and in the radial direction by the general layer-by-layer growth method make it possible to fabricate complicated and functional three-dimensional structures in a bottom-up manner. We can grow some vertical heterostructure nanopillars with flat tops on Si(111) substrates, and we have obtained core-multishell Ga(In)P/GaAs/GaP nanowires with flat tops and their air-gap structures by using selective wet etching. Simulations indicate that a high- 𝑄 factor of over 2000 can be achieved for this air-gap structure. From the GaAs growth experiments, we found that zincblende GaAs without any stacking faults can be grown after the GaP nanowire growth. Pillars containing a quantum dot and without stacking faults can be grown by using this method. We can also obtain flat-top pillars without removing the Au catalysts when using small Au particles.