Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates

Figure 7

GaAsP nanopillar containing a GaAs dot. (a) Schematic illustration; (b) TEM images; (c) EDS mapping images. Here, an Au colloid with 60-nm diameter was used. The sample was thinned by the focused ion beam method. A stacking-fault-free region is confirmed above the GaP nanowire. However, we could not observe the dot in the pillar.