Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
Figure 3
(a) PL emission spectra from samples with Si-NCs and 1 MeV Ag ion implantation, annealed in reducing atmosphere (red solid curve) and Ar atmosphere (blue dotted curve). The black dashed curve is the spectra of the reference sample (only Si-NCs). The excitation wavelength was 355 nm. The inset shows the absorption spectra of the sample with Ag ion implantation after thermal annealing, (b) PL emission from samples with Si-NCs in (black dashed curve) and then with Au ion implantation is annealed in reducing atmosphere at 1100°C (blue dotted curve) or 600°C (red solid curve). The inset shows the absorption spectra of the sample with Au implantation after thermal annealing.
