Research Article
Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
Table 1
Si-NCs preparation at 1.5 MeV.
| Sample | Implantation | Steps thermal treatment | Thermal treatment |
| A | Si | 1 | 1100°C for 1 h in RA | — | — | B | Si | 1 | 1100°C for 1 h in Ar | — | 2 | 510°C for 1 h in RA | A1 | Si | 1 | 1100°C for 1 h in RA | — | 2 | 1100°C for 1 h in RA | A2 | Si | 1 | 1100°C for 1 h in RA | — | 2 | 1100°C for 2 h in RA |
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