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Journal of Nanotechnology
Volume 2016, Article ID 9385725, 6 pages
Research Article

Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

1School of Material and Science Engineering, Jiangsu University, Zhenjiang 212013, China
2School of Mechanics Engineering, Jiangsu University, Zhenjiang 212013, China

Received 20 September 2015; Revised 11 January 2016; Accepted 7 February 2016

Academic Editor: Oded Millo

Copyright © 2016 Shanyue Zhao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along the -axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3 segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.