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Journal of Nanotechnology
Volume 2017, Article ID 4575013, 9 pages
https://doi.org/10.1155/2017/4575013
Research Article

Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM

1Department of Computer Science and Engineering, Oakland University, Rochester, MI, USA
2Department of Computer Science, University of Tabuk, Tabuk, Saudi Arabia

Correspondence should be addressed to Shital Joshi; moc.liamg@48latihs.j

Received 4 January 2017; Accepted 16 February 2017; Published 15 March 2017

Academic Editor: Hongmei Luo

Copyright © 2017 Shital Joshi and Umar Alabawi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Shital Joshi and Umar Alabawi, “Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM,” Journal of Nanotechnology, vol. 2017, Article ID 4575013, 9 pages, 2017. https://doi.org/10.1155/2017/4575013.