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Journal of Nanotechnology
Volume 2017, Article ID 6987430, 6 pages
https://doi.org/10.1155/2017/6987430
Research Article

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

Foundation Department, North China Institute of Science and Technology, Beijing 101601, China

Correspondence should be addressed to Lili Cai; moc.361@c4002ylil

Received 20 November 2016; Accepted 12 January 2017; Published 12 February 2017

Academic Editor: Yongxing Zhang

Copyright © 2017 Lili Cai and Cuiju Feng. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. A. Majid, J. Iqbal, and A. Ali, “Structural, optical and magnetic properties of Ce-GaN based diluted magnetic semiconductor,” Journal of Superconductivity and Novel Magnetism, vol. 24, no. 1-2, pp. 585–590, 2011. View at Publisher · View at Google Scholar · View at Scopus
  2. Q. Q. Li, Q. Y. Hao, Y. Li, and G. Liu, “First principle study of Ce doping and related complexes in GaN,” Computational Materials Science, vol. 72, pp. 32–37, 2013. View at Publisher · View at Google Scholar · View at Scopus
  3. J. K. Shen and F. W. Huang, “Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer,” Applied Physics Letters, vol. 103, no. 6, Article ID 063906, 4 pages, 2013. View at Publisher · View at Google Scholar
  4. A. Majid, A. Dar, and J. J. Zhu, “Cerium induced ferromagnetic exchange interactions in GaN,” Journal of Magnetism and Magnetic Materials, vol. 374, pp. 676–679, 2015. View at Publisher · View at Google Scholar · View at Scopus
  5. J. Neugebauer and C. G. Van De Walle, “Atomic geometry and electronic structure of native defects in GaN,” Physical Review B, vol. 50, no. 11, pp. 8067–8070, 1994. View at Publisher · View at Google Scholar · View at Scopus
  6. P. Boguslawski, E. L. Briggs, and J. Bernholc, “Native defects in gallium nitride,” Physical Review B, vol. 51, no. 23, pp. 17255–17258, 1995. View at Publisher · View at Google Scholar · View at Scopus
  7. J. Kang, D. Cai, X. Xiao, Y. Shen, and B. Shen, “Defects in III nitrides epilayers,” Research and Progress of Solid State Electronics, vol. 22, no. 4, pp. 375–380, 2002. View at Google Scholar · View at Scopus
  8. Y.-W. Shen and J.-Y. Kang, “Ab initio calculation of the electronic structure of carbon and oxygen impurities in GaN,” Wuli Xuebao/Acta Physica Sinica, vol. 51, no. 3, pp. 645–648, 2002. View at Google Scholar · View at Scopus
  9. G. Y. Gao, K. L. Yao, Z. L. Liu, Y. L. Li, Y. C. Li, and Q. M. Liu, “Ab initio pseudopotential studies of the pressure dependences of structural, electronic and optical properties for GaN,” Solid State Communications, vol. 138, no. 10-11, pp. 494–497, 2006. View at Publisher · View at Google Scholar · View at Scopus
  10. W. E. Packard, J. D. Dow, K. Doverspike, R. Kaplan, and R. Nicolaides, “Vacancy structures on the GaN(0001) surface,” Journal of Materials Research, vol. 12, no. 3, pp. 646–650, 1997. View at Publisher · View at Google Scholar · View at Scopus
  11. Y.-J. Du, B.-K. Chang, J.-J. Zhang, B. Li, and X.-H. Wang, “First-principles study of the electronic structure and optical properties of GaN(0001) surface,” Acta Physica Sinica, vol. 61, no. 6, pp. 414–420, 2012. View at Google Scholar · View at Scopus
  12. S. Zhang, J. Shi, M. Zhang, M. Yang, and J. Li, “First-principles investigation on optical properties of GaN and InGaN alloys,” Journal of Physics D: Applied Physics, vol. 44, no. 49, pp. 495304–495312, 2011. View at Publisher · View at Google Scholar
  13. Z. Dridi, A. Lazreg, H. Rozale et al., “Electronic structure and magnetism of cubic Ga1xEuxN and Al1−xEuxN using the LSDA+U approach,” Computational Materials Science, vol. 48, no. 4, pp. 743–748, 2010. View at Google Scholar
  14. E. Yamaguchi and M. R. Junnarkar, “Effects of nitrogen vacancy on optical properties of nitride semiconductors,” Journal of Crystal Growth, vol. 189-190, pp. 570–574, 1998. View at Publisher · View at Google Scholar · View at Scopus
  15. R. P. Davies, C. R. Abernathy, S. J. Pearton, D. P. Norton, M. P. Ivill, and F. Ren, “Review of recent advances in transition and lanthanide metal-doped GaN and ZnO,” Chemical Engineering Communications, vol. 196, no. 9, pp. 1030–1053, 2009. View at Publisher · View at Google Scholar · View at Scopus
  16. X. C. Sheng, The Spectrum and Optical Property of Semiconductor, Science Press, Beijing, China, 2003.
  17. K. Huang and R. Q. Han, Solid State Physics, Higher Education Press, Beijing, China, 1988.
  18. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Nature of deep center emissions in GaN,” Applied Physics Letters, vol. 96, no. 15, pp. 1902–1907, 2010. View at Publisher · View at Google Scholar · View at Scopus