Nanobismuth: Fabrication, Optical, and Plasmonic Properties—Emerging Applications

Figure 1

(a) Brillouin zone of bismuth (Bi) in the momentum space: one hole pocket at the T-point and three electron pockets at the T-point. (b) Electronic band structure of Bi near the Fermi level [29, 30]. At room temperature, the direct bandgap at the L-point has an energy of 36 meV, the electron Fermi energy at the L-point is 56 meV, and the hole Fermi energy at the T-point is 42 meV. (c) Full band diagram of Bi calculated by the third-neighbor tight-bonding model accounting for the spin-orbit coupling. Reprinted from [31] © 2015 Fuseya et al., originally published in Journal of the Physical Society of Japan, vol. 84, p. 012001, 2015, doi: 10.7566/JPSJ.84.012001, under CC by 4.0 license.

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