Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

<div><i>I</i><sub>d</sub>–<i>V</i><sub>d</sub> characteristics of n-type GNRFETs for multiple gate voltages in 0.1 V decrement from <i>V</i><sub>g</sub> = 1 V at the top.</div>

Journal of Nanotechnology

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Figure 3

Figure 3: Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design 