Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Table 1

Device parameters of graphene nanoribbon field-effect transistor.

Device parameters	Values
Length of the channel	15 nm
Top gate dielectric material thickness	0.95 nm
Space between adjacent GNRs	2 nm
No. of GNRs	6
Substrate oxide thickness	20 nm
No. of dimer lines in GNR lattice	12