Table of Contents
Journal of Photonics
Volume 2016, Article ID 4739020, 7 pages
http://dx.doi.org/10.1155/2016/4739020
Research Article

Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

1Department of Mechatronics Engineering, Faculty of Technology, Firat University, 23169 Elazig, Turkey
2Department of Physics, Faculty of Science, Firat University, 23169 Elazig, Turkey
3School of Electrical Engineering and Computer Science, Ohio University, Athens, OH 45701, USA

Received 9 March 2016; Accepted 2 June 2016

Academic Editor: Roberto Proietti

Copyright © 2016 Mehmet Çavaş et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe2O4/p-Si/Al photodiode. A thin film of CdFe2O4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V) of the Al/CdFe2O4/p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from  A under dark conditions to  A at 100 mW/cm2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe2O4/p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V) characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density () value of the Al/CdFe2O4/p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe2O4/p-Si/Al photodiode has declined with higher frequency.