In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe2O4/p-Si/Al photodiode. A thin film of CdFe2O4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V) of the Al/CdFe2O4/p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2063999pt" id="M1" height="11.6425pt" version="1.1" viewBox="-0.0498162 -11.4361 58.3897 11.6425" width="58.3897pt"><g transform="matrix(.013,0,0,-0.013,0,0)"><path id="g113-50" d="M384 0V27C293 34 287 42 287 114V635C232 613 172 594 109 583V559L157 557C201 555 205 550 205 499V114C205 42 199 34 109 27V0H384Z"/></g><g transform="matrix(.013,0,0,-0.013,6.24,0)"><path id="g113-47" d="M113 -12C146 -12 170 11 170 46C170 78 146 103 114 103S58 78 58 46C58 11 82 -12 113 -12Z"/></g><g transform="matrix(.013,0,0,-0.013,9.204,0)"><path id="g113-49" d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z"/></g><g transform="matrix(.013,0,0,-0.013,15.444,0)"><path id="g113-57" d="M249 635C141 635 70 555 70 471C70 401 114 353 179 316C143 294 106 267 90 252C68 231 45 202 45 157C45 50 130 -12 237 -12C322 -12 435 52 435 169C435 256 372 304 303 343C349 374 375 398 383 407C401 429 411 458 411 487C411 569 344 635 249 635ZM238 603C285 603 337 567 337 482C337 422 310 385 276 358C205 393 145 426 145 500C145 552 179 603 238 603ZM248 20C183 20 125 70 125 163C125 218 158 268 206 300C284 261 355 217 355 143C355 66 308 20 248 20Z"/></g><g transform="matrix(.013,0,0,-0.013,24.59,0)"><path id="g113-43" d="M471 153C471 170 463 194 452 212C400 220 373 229 322 255C373 281 400 290 452 298C463 316 471 339 471 357C456 366 431 371 410 370C377 329 356 310 308 279C311 336 317 364 336 413C326 432 310 451 294 459C279 451 262 432 252 413C271 364 277 336 280 279C232 310 211 329 178 370C157 371 132 367 117 357C117 340 125 316 136 298C188 290 215 281 266 255C215 229 188 220 136 212C125 194 117 171 117 153C132 144 157 139 178 140C211 181 232 200 280 231C277 174 271 146 252 97C262 78 278 59 294 51C309 59 326 78 336 97C317 146 311 174 308 231C356 200 377 181 410 140C431 139 456 143 471 153Z"/></g><g transform="matrix(.013,0,0,-0.013,35.126,0)"><use xlink:href="#g113-50"/></g><g transform="matrix(.013,0,0,-0.013,41.366,0)"><use xlink:href="#g113-49"/></g><g transform="matrix(.0091,0,0,-0.0091,47.653,-5.741)"><path id="g54-33" d="M556 236V289H56V236H556Z"/></g><g transform="matrix(.0091,0,0,-0.0091,53.213,-5.741)"><path id="g50-56" d="M453 623H65C60 580 56 530 46 472H80C103 538 110 548 175 548H389C310 380 195 168 90 0L98 -12L175 -2C273 206 366 408 462 610L453 623Z"/></g></svg> A under dark conditions to <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2063999pt" id="M2" height="11.7978pt" version="1.1" viewBox="-0.0498162 -11.5914 58.3897 11.7978" width="58.3897pt"><g transform="matrix(.013,0,0,-0.013,0,0)"><path id="g113-55" d="M137 343C167 482 260 545 321 574C357 591 397 603 429 609L423 641C382 634 335 622 295 608C189 570 37 457 37 238C37 84 125 -12 242 -12C362 -12 447 89 447 209C447 311 374 393 267 393C247 393 226 386 204 376L137 343ZM227 337C318 337 361 256 361 173C361 105 336 22 258 22C176 22 126 120 126 240C126 266 127 291 132 310C155 323 189 337 227 337Z"/></g><g transform="matrix(.013,0,0,-0.013,6.24,0)"><use xlink:href="#g113-47"/></g><g transform="matrix(.013,0,0,-0.013,9.204,0)"><use xlink:href="#g113-50"/></g><g transform="matrix(.013,0,0,-0.013,15.444,0)"><use xlink:href="#g113-50"/></g><g transform="matrix(.013,0,0,-0.013,24.59,0)"><use xlink:href="#g113-43"/></g><g transform="matrix(.013,0,0,-0.013,35.126,0)"><use xlink:href="#g113-50"/></g><g transform="matrix(.013,0,0,-0.013,41.366,0)"><use xlink:href="#g113-49"/></g><g transform="matrix(.0091,0,0,-0.0091,47.653,-5.741)"><use xlink:href="#g54-33"/></g><g transform="matrix(.0091,0,0,-0.0091,53.213,-5.741)"><path id="g50-53" d="M462 177V227H365V632H320C217 496 116 350 21 208V177H284V109C284 43 280 38 190 31V0H451V31C369 38 365 43 365 108V177H462ZM284 227H88C155 336 218 430 282 519H284V227Z"/></g></svg> A at 100 mW/cm2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe2O4/p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V) characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density (<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.2957pt" id="M3" height="11.9316pt" version="1.1" viewBox="-0.0498162 -8.6359 15.78 11.9316" width="15.78pt"><g transform="matrix(.013,0,0,-0.013,0,0)"><path id="g113-69" d="M743 375C743 570 607 650 407 650H136L130 622C214 612 220 606 204 526L125 122C110 43 105 36 24 27L17 0H250C382 0 482 23 571 76C680 141 743 248 743 375ZM644 379C644 188 520 36 305 36C277 36 249 38 229 46C205 55 202 71 212 126L293 553C300 588 306 600 317 606C330 613 356 617 390 617C547 617 644 537 644 379Z"/></g><g transform="matrix(.0091,0,0,-0.0091,9.893,3.132)"><path id="g58-103" d="M138 535C169 535 191 560 191 589C191 620 168 644 139 644S85 620 85 589C85 560 110 535 138 535ZM257 0V30C192 35 185 43 185 109V453C142 435 94 422 40 414V386C101 378 104 372 104 311V109C104 41 97 35 33 30V0H257Z"/></g><g transform="matrix(.0091,0,0,-0.0091,12.286,3.132)"><path id="g58-114" d="M303 37L293 66C280 59 256 49 231 49S173 63 173 143V396H281C294 404 298 428 287 439H173V575L158 577L92 509V439H46L17 408L22 396H92V107C92 27 128 -12 192 -12C203 -12 218 -9 237 2L303 37Z"/></g></svg>) value of the Al/CdFe2O4/p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe2O4/p-Si/Al photodiode has declined with higher frequency.

Mehmet &#xc7;ava&#x15f;

Fahrettin Yakuphanoglu

Sava&#x15f; Kaya

Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

The evolution of both the core melting and fiber fuse phenomena in a single-mode fiber-optic connector was studied theoretically. Carbon black was chosen as a light-absorbent material. A thin absorbent layer with a thickness of 1&#x2009;&#x3bc;m order was assumed to be formed between the fiber end faces in the connector. When a high-power laser operating at 1.48 or 1.55&#x2009;&#x3bc;m was input into the connector, the temperature on the fiber core surface increased owing to heat conduction from the light-absorbent material. The heat flow process of the core, which caused the core to melt or the fiber fuse phenomenon, was theoretically calculated with the explicit finite-difference method. The results indicated that initial attenuation of less than 0.5&#x2009;dB was desirable to prevent core fusion in the connectors when the input 1.48&#x2009;&#x3bc;m laser power was 1&#x2009;W. It was found that a core temperature of more than 4000&#x2009;K was necessary to generate and maintain a fiber fuse.

Yoshito Shuto

End Face Damage and Fiber Fuse Phenomena in Single-Mode Fiber-Optic Connectors

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Journal of Photonics

Table of Contents

Table of Contents: 2016

Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode

End Face Damage and Fiber Fuse Phenomena in Single-Mode Fiber-Optic Connectors