Research Article

Single-Walled Carbon Nanotube Network Field Effect Transistor as a Humidity Sensor

Figure 4

Source-drain current change of the FET sensor in dry and humid air ( R H = 7 8 % ) : at (a) negative and 0 gate voltages, and (b) positive gate voltages.
496546.fig.004a
(a)
496546.fig.004b
(b)