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Journal of Sensors
Volume 2015, Article ID 167145, 11 pages
Research Article

Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China

Received 7 November 2014; Accepted 22 April 2015

Academic Editor: Marco Grassi

Copyright © 2015 Xin-Yan Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The application of semifloating gate transistor (SFGT) as the single-transistor active pixel image sensor (APS) is investigated in this paper. This single-transistor (1T) APS can realize the functions of the conventional 3T CMOS image sensor. The device operation mechanism, optimization methods, and transient behavior measurements will be discussed. Because the floating junction of this device is connected to the floating gate, special behaviors such as floating gate voltage pinning effects were observed. The transient time measurement emulating the exposure procedure also confirmed the light sensing function as a single-transistor image sensor.