Resolution Enhancement Method Used for Force Sensing Resistor Array

Table 1

Signature profiles of at different rotating speeds.

Force (N)	Group A			Group B
	Modeled (kΩ)	Meas. (kΩ)	Error (%)	Modeled (kΩ)	Meas. (kΩ)	Error (%)
20	1.82	1.83	0.39	1.82	1.85	1.44
30	1.16	1.19	2.13	1.17	1.15	−2.08
40	0.85	0.88	3.69	0.86	0.83	−3.48
50	0.66	0.69	4.02	0.67	0.69	2.31
60	0.54	0.56	3.31	0.55	0.56	1.25
70	0.46	0.47	2.84	0.47	0.48	2.55
80	0.39	0.41	3.90	0.40	0.39	−3.74
90	0.35	0.36	3.91	0.36	0.35	−1.72
Force (N)	Group C			Group D
	Modeled (kΩ)	Meas. (kΩ)	Error (%)	Modeled (kΩ)	Meas. (kΩ)	Error (%)
20	1.84	1.87	1.51	1.69	1.66	−1.61
30	1.11	1.10	−0.49	1.03	1.07	3.49
40	0.77	0.80	3.81	0.73	0.75	2.78
50	0.58	0.59	1.52	0.56	0.57	2.35
60	0.46	0.48	3.78	0.45	0.46	2.96
70	0.38	0.39	2.46	0.37	0.36	−2.90
80	0.32	0.33	2.57	0.32	0.32	0.00
90	0.28	0.27	−2.67	0.27	0.28	2.39
Force (N)	Group E			Group F
	Modeled (kΩ)	Meas. (kΩ)	Error (%)	Modeled (kΩ)	Meas. (kΩ)	Error (%)
20	1.55	1.58	1.93	1.49	1.49	−0.32
30	0.97	0.95	−2.40	0.98	0.95	−2.71
40	0.70	0.68	−2.82	0.72	0.71	−1.54
50	0.54	0.56	3.36	0.57	0.58	1.71
60	0.44	0.44	0.00	0.47	0.49	3.96
70	0.37	0.37	0.00	0.40	0.39	−2.60
80	0.32	0.32	0.00	0.35	0.35	0.00
90	0.28	0.28	0.00	0.31	0.30	−2.40