Journal of Sensors / 2015 / Article / Tab 1

Research Article

Resolution Enhancement Method Used for Force Sensing Resistor Array

Table 1

Signature profiles of at different rotating speeds.

Force (N)Group AGroup B
Modeled (kΩ)Meas. (kΩ)Error (%)Modeled (kΩ)Meas. (kΩ)Error (%)

201.821.830.391.821.851.44
301.161.192.131.171.15−2.08
400.850.883.690.860.83−3.48
500.660.694.020.670.692.31
600.540.563.310.550.561.25
700.460.472.840.470.482.55
800.390.413.900.400.39−3.74
900.350.363.910.360.35−1.72

Force (N)Group CGroup D
Modeled (kΩ)Meas. (kΩ)Error (%)Modeled (kΩ)Meas. (kΩ)Error (%)

201.841.871.511.691.66−1.61
301.111.10−0.491.031.073.49
400.770.803.810.730.752.78
500.580.591.520.560.572.35
600.460.483.780.450.462.96
700.380.392.460.370.36−2.90
800.320.332.570.320.320.00
900.280.27−2.670.270.282.39

Force (N)Group EGroup F
Modeled (kΩ)Meas. (kΩ)Error (%)Modeled (kΩ)Meas. (kΩ)Error (%)

201.551.581.931.491.49−0.32
300.970.95−2.400.980.95−2.71
400.700.68−2.820.720.71−1.54
500.540.563.360.570.581.71
600.440.440.000.470.493.96
700.370.370.000.400.39−2.60
800.320.320.000.350.350.00
900.280.280.000.310.30−2.40