Research Article
Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor
Table 1
SOITAM nanoscale device 3rd generation.
| | Parameters | Values |
| | Substrate width | 250 nm | | Substrate length | 65 nm | | Substrate height | 100 nm | | V-groove length | 100 nm | | V-groove height | 70 nm | | Box thickness | 30 nm | | Channel thickness | 30 nm | | Channel length | 45 nm | | Channel width | 22 nm |
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