Table of Contents Author Guidelines Submit a Manuscript
Journal of Sensors
Volume 2017, Article ID 4078240, 9 pages
https://doi.org/10.1155/2017/4078240
Research Article

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

School of Aeronautics and Astronautics, Zhejiang University, Zheda Road 38, Hangzhou 310027, China

Correspondence should be addressed to Hua Chen; nc.ude.ujz@auhnehc

Received 1 October 2016; Accepted 2 February 2017; Published 20 February 2017

Academic Editor: Hao Gao

Copyright © 2017 Jiongjiong Mo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jiongjiong Mo, Hua Chen, Zhiyu Wang, and Faxin Yu, “High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application,” Journal of Sensors, vol. 2017, Article ID 4078240, 9 pages, 2017. https://doi.org/10.1155/2017/4078240.