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Journal of Sensors
Volume 2018 (2018), Article ID 6436481, 10 pages
https://doi.org/10.1155/2018/6436481
Research Article

A One-Dimensional Magnetic Chip with a Hybrid Magnetosensor and a Readout Circuit

1Department of Electrical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
2Sasi Institute of Technology and Engineering, Department of Electronics and Communication Engineering, Tadepalligudem, India

Correspondence should be addressed to Guo-Ming Sung; wt.ude.tutn@gnusmg

Received 11 August 2017; Revised 25 November 2017; Accepted 5 December 2017; Published 25 March 2018

Academic Editor: Lucio Pancheri

Copyright © 2018 Guo-Ming Sung et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This work presents a one-dimensional magnetic chip composed of a hybrid magnetosensor and a readout circuit, which were fabricated with 0.18 μm 1P6M CMOS technology. The proposed magnetosensor includes a polysilicon cross-shaped Hall plate and two separated metal-oxide semiconductor field-effect transistors (MOSFETs) to sense the magnetic induction perpendicular to the chip surface. The readout circuit, which comprises a current-to-voltage converter, a low-pass filter, and an instrumentation amplifier, is designed to amplify the output Hall voltage with a gain of 43 dB. Furthermore, a SPICE macro model is proposed to predict the sensor’s performance in advance and to ensure sufficient comprehension of the magnetic mechanism of the proposed magnetosensor. Both simulated and measured results verify the correctness and flexibility of the proposed SPICE macro model. Measurements reveal that the maximum output Hall voltage VH, the optimum current-related magnetosensitivity SRI, the optimum voltage-related magnetosensitivity SRV, the averaged nonlinearity error NLE, and the relative bias current Ibias are 4.381 mV, 520.5 V/A·T, 40.04 V/V·T, 7.19%, and 200 μA, respectively, for the proposed 1-D magnetic chip with a readout circuit of 43 dB. The averaged NLE is small at high magnetic inductions of ±30 mT, whereas it is large at low magnetic inductions of ±30 G.