Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS

Figure 8

After-pulsing probability versus the reverse voltage across the SPAD (a) and versus the excess bias (b) for different temperatures (−40°C to 50°C).

(a)

(b)