Influence of Different Types of Recombination Active Defects on the Integral Electrical Properties of Multicrystalline Silicon Solar Cells

Figure 6

(a) EL image at forward bias (~0.6 V) of REF-37. The EL signal is decreased over the whole area. (b) ReBEL image at voltage regime-2 ( = 11 V). Single prebreakdown sites distributed over the whole solar cell area (independent of grain boundaries) can be observed due to their spot-like occurrence.

(a)

(b)