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Journal of Solar Energy
Volume 2015 (2015), Article ID 169015, 9 pages
Research Article

Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

1Department of Electrical and Power Engineering, Higher Technical Teachers’ Training College (HTTTC), University of Buea, Kumba, Cameroon
2Department of Electrical, Energetic and Automatic Engineering, ENSAI, University of Ngaoundere, Ngaoundere, Cameroon
3Laboratory of Modeling, Intelligence, Process and Systems (MIPS), University of Haute Alsace, 61 Road Albert Camus, 68093 Mulhouse Cedex, France

Received 26 June 2015; Accepted 12 August 2015

Academic Editor: Santanu Bandyopadhyay

Copyright © 2015 Abraham Dandoussou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.