Direct Current Sputter Epitaxy of Heavily Doped p⁺ Layer for Monocrystalline Si Solar Cells

Figure 3

(a) Logarithmic photo and dark J-V characteristics of n⁺p SC and p⁺n SC without BSF layer and (b) linear photo J-V characteristics of the SCs. The photocurrent was measured under AM1.5 light illumination. The samples were not annealed after p⁺n or n⁺p junction formation.

(a)

(b)