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Journal of Spectroscopy
Volume 2013, Article ID 103602, 6 pages
Research Article

Influence of the Crystal Texture on Raman Spectroscopy of the AlN Films Prepared by Pulse Laser Deposition

1Common Course Department, Shandong University of Science and Technology, Jinan 250031, China
2Qingdao Key Laboratory of Terahertz Technology, Department of Applied Physics, College of Science, Shandong University of Science and Technology, Qingdao 266510, China

Received 8 June 2012; Accepted 28 September 2012

Academic Editor: Zhifeng Shao

Copyright © 2013 Jingjing Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We investigate the Raman scattering of the AlN films prepared by pulse laser deposition. The Raman spectrum and the X-ray diffraction (XRD) patterns of the AlN films were compared to find out the influence of the crystal texture on the Raman scattering. The (high) and (TO) scattering modes were observed in Raman spectra. The results show that the orientation and the crystal quality of the AlN films have a great impact on these Raman scattering modes. The deterioration of (002) orientation and the appearance of other orientations in the XRD patterns lead to the weakening of the (high) mode and strengthening of the (TO) mode in the Raman spectrum. In addition, the (high) peak is broadened with the increasing of the width of the X-ray rocking curve. The broadening of the Raman peaks can be associated with degeneration in crystal quality. Furthermore, by combining the energy shift of (high) mode with the measured residual stress in the films, the Raman-stress factor of the AlN films prepared by pulse laser deposition is −4.45 cm−1/GPa for the (high) mode.