Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD

<div>(a) Optical photography of the specimen in <i>X</i>(<i>YY</i>)<i>X</i> geometry (in Porto notations). The inset: optical photography of the specimen in <i>Z</i>(<i>YY</i>)<i>Z</i> geometry (in Porto notations). The arrow-remarked laser spots are eye guide showing the real area of the laser spot during measurements. The marker represents 10 <i>μ</i>m. (b) Spatially resolved Raman spectra of as-deposited defected graphene at 633 nm excitation.</div>

Journal of Spectroscopy

fig9

Figure 9

Figure 9: Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD 