Table of Contents
Laser Chemistry
Volume 16, Issue 4, Pages 245-253

Photolysis of SiH4 by the Third Harmonic of a Nd:YAG Laser at 355 NM

Laser Physics Laboratory, Department of Physics, Howard University, Washington 20059, D. C., USA

Received 15 October 1995

Copyright © 1996 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The photolysis of silane (SiH4) was carried out using the third harmonic of a Nd: YAG laser at 355 nm, at a fixed SiH4 pressure of 350 Torr, varying the laser energy fluence in the range of 30–300 Jcm-2. The emission spectra indicates that the photofragments formed are SiH2, SiH, Si, H2, and H. The (A1B1-X1A1) transitions at 552.7 nm, 525.3 nm, 505.6 nm, and 484.7 nm of SiH2 are due to a two photon absorption process. The (A2Δ-X2π) transitions of SiH at 425.9 nm, 418 nm, 414.2 nm, 412.8 nm and 395.6 nm are due to a three photon absorption process. The brownish white deposit on the cell windows indicates the presence of amorphous silicon (a:Si-H). The two atomic lines of Si(4s1P0 3p21D2) at 288.1 nm, and (4s3Pj 3P3Pj) at 251.6 nm are observed. The atomic Si transitions are due to a three photon absorption. We observed seven transitions due to molecular hydrogen at wavelengths 577.5 nm, 565.5 nm, 534.4 nm, 542.5 nm, 471 nm, 461.7 nm, and 455.4 nm. These bands are due to a four photon absorption proc6ss. In addition to the molecular bands we also observed hydrogen atomic lines Hβ, Hγ and Hδ.