Table of Contents
Laser Chemistry
Volume 2008 (2008), Article ID 892721, 4 pages
http://dx.doi.org/10.1155/2008/892721
Research Article

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Department of Ecosystem Engineering, The University of Tokushima, 2-1 Minamijosanjimacho, Tokushima 770-8506, Japan

Received 4 June 2008; Accepted 29 August 2008

Academic Editor: Stavros Pissadakis

Copyright © 2008 Shigeki Matsuo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Shigeki Matsuo, Kensuke Tokumi, Takuro Tomita, and Shuichi Hashimoto, “Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses,” Laser Chemistry, vol. 2008, Article ID 892721, 4 pages, 2008. doi:10.1155/2008/892721