Three-Dimensional Modeling of the Heat-Affected Zone in Laser Machining Applications

Figure 3

The axial temperature profile in Si. Conditions: 𝑄=10 W at 𝑓=1 MHz (profiles: 1, 4) and 10 MHz (2, 3), 𝐴=0.5 absorbance, 10 cm/s scan speed, time moment 𝑡=0.01𝑇 (1, 2, 4) and 0.1𝑇 (3), and dimensions of a rectangular heat source were 𝑎=2,ℎ=20𝜇m (1–3), and 𝑎=5𝜇m (4). Typical Si parameters: 𝑐_𝑝=0.7 J/(g K), 𝜌=2.329g/cm³, 𝜒=0.8cm²/s, and 𝑇_𝑚=1412^∘C is the melting temperature of Si.