Research Article

Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 14

Variation of the best value of the maximum transconductance normalized to a width to length ratio of the different MESFET channels of 10.75 distributed over the 5 0 × 5 0 substrate of Figure 11.
140976.fig.0014