140976.fig.0022a
(a)
140976.fig.0022b
(b)
140976.fig.0022c
(c)
140976.fig.0022d
(d)
140976.fig.0022e
(e)
140976.fig.0022f
(f)
Figure 22: Effect of Fe doping of the BTO dielectric on capacity (a, c, e) and 𝑄 value (b, d, f) of Pt/BTO: Fe/Pt thin film capacitors for 0.5% (a, b), 1% (c, d), and 2% (e, f) Fe2O3 in the BTO PLD target. The dopant concentration influences the temperature dependence of permittivity considerably.