Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Table 5

Selection of dopants for ZnO and the aim of doping, together with transfer factors of dopant composition from the PLD target into the thin film, as determined by RBS and PIXE analysis of at least five different films for each dopant [6, 93]. DMS stands for diluted magnetic semiconductor which is still challenging, as well as stable and reproducible p-type conductivity in ZnO.

Dopant; in ZnO	Aim of doping	Transfer factor from; target into thin film
Li	p-type conductivity	1.37±0.72
N	p-type conductivity	N/A
Mg	higher band gap	1.86±0.49
Al	n-type conductivity	1.56±0.44
P	p-type conductivity	0.50±0.01
Ti	DMS	1.15±0.43
Mn	DMS	1.03±0.28
Fe	DMS	1.47±0.16
Co	DMS	1.23±0.09
Ni	DMS	0.15±0.02
Cu	DMS	0.74±0.25
Ga	n-type conductivity	1.54±1.04
Cd	lower band gap	0.09±0.12
Sb	p-type conductivity	1.71±0.32