Research Article
Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
Table 3
Relative permittivity and loss tangent of typical large-area BaxSr1−x TiO3 thin films grown by PLD or sputtering on the indicated substrates (size mm2 or 2-inch diameter), measured at 35 GHz and 300 K with an open Fabry-Perot resonator by R. Heidinger at Karlsruhe Research Center. The BSTO films grow with polycrystalline structure on the ceramic substrates and with oriented epitaxial structure on the single-crystalline substrates.
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*Al2O3-based polycrystalline microwave ceramics. The surface roughness Ra of the LTCC-substrates was 95 to 145 nm, and Ra of the CoorsTec substrates 21–27 nm (A-face HIREL quality). |