Macro- and Microsimulations for a Sublimation Growth of SiC Single Crystals

Table 1

Computations on different grids for the errors analysis with absolute differences (cf. (4.1)).

Grid		Grid point (0,0.028) (Tbottom)		Grid point (0,0.173) (Ttop)
Level	Number of nodes	Solution 𝑇[K]	Absolute difference 𝑇[K]	Solution 𝑇[K]	Absolute difference 𝑇[K]
0	1532	2408.11		2813.29
1	23017	2409.78	1.67	2812.78	1.01
2	91290	2410.35	0.57	2811.79	0.49
3	364225	2410.46	0.11	2811.60	0.19