Model of PE-CVD Apparatus: Verification and Simulations

Table 32

Parameters of source concentration.

81 point sources of $\text{SiC}$ at position	$X=\mathrm{10,11,12,000,90};Y=20$
Line source of $\text{H}$ at position	$x\in [\mathrm{5,95}],y\in [\mathrm{20,25}]$
Starting point of source concentration	$t_{\text{start}}=0.0$
End point of source concentration	$t_{\text{end}}=1·10^8$
Amount of permanent source concentration	$\text{Si}{c}_{\text{source}}=1.0,{\text{H}}_{\text{source}}=0.20$
Number of time steps	$100$