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Mathematical Problems in Engineering
Volume 2015, Article ID 450324, 4 pages
Research Article

The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

Received 27 July 2014; Accepted 15 September 2014

Academic Editor: Stephen D. Prior

Copyright © 2015 Hai-Xia Guo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μm. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography method is adopted to make Bragg gratings in p-waveguide layer (Λ = 240 nm) of the GaAs epitaxial wafers. The best experimental conditions are determined by analyzing the surface morphology and three-dimensional holographic grating. In addition, the output power data and wavelength of the distributed feedback laser emitting at different temperatures are presented. And the wavelength varies with temperature at a rate of 0.062 nm/K. Finally, the conclusion is drawn that this kind of DFB laser has a better temperature stabilized wavelength and narrower line width.