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Modelling and Simulation in Engineering
Volume 2014, Article ID 635803, 7 pages
http://dx.doi.org/10.1155/2014/635803
Research Article

Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects

SKP Engineering College, Tiruvannamalai, Tamil Nadu 606 611, India

Received 7 January 2014; Accepted 23 April 2014; Published 21 May 2014

Academic Editor: Agostino Bruzzone

Copyright © 2014 P. Anandan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-dependent model for silicon nanowires including the self-heating effects has been derived and its effects on device parameters have been observed. The power spectral density as a function of thermal resistance shows significant improvement as the channel length decreases. The effects of thermal noise including self-heating of the device are explored. Moreover, significant reduction in noise with respect to channel thermal resistance, gate length, and biasing is analyzed.