Simulating the Performance of Al_0.3Ga_0.7As/InP/Ge Multijunction Solar Cells under Variation of Spectral Irradiance and Temperature

Table 1

The input parameters for the standard simulation (at one sun spectral irradiance and the temperature of 25°C).

Subcell	Energy gap (eV)	Thickness (µm)	p-Doping (cm^−3)	n-Doping (cm^−3)	Absorption spectrum (nm)
Al0.3Ga0.7As	1.817	2.778	1.0 × 10^16	1.0 × 10^20	280–685
InP	1.350	3.500	1.0 × 10^16	1.11 × 10^17	598–841
Ge	0.664	4.000	1.0 × 10^16	1.12 × 10^17	872–1773