Research Letters in Physics

Volume 2008, Article ID 286546, 5 pages

http://dx.doi.org/10.1155/2008/286546

Research Letter

## Current Tunnelling in MOS Devices with Gate Dielectric

^{1}Unité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, Monastir 5019, Tunisia^{2}Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bâtement 502, 20 Avenue Albert Einstein, Villeurbanne Cedex 69621, France

Received 10 October 2007; Accepted 8 January 2008

Academic Editor: Anil R. Chourasia

Copyright © 2008 A. Bouazra et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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